| PART |
Description |
Maker |
| 2SC9011 |
Transistor. AM converter, AM/FM IF amplifier general purpose transistor. Collector-base voltage Vcbo = 60V. Collector-emitter voltage Vceo = 30V. Emitter-base voltage Vebo = 5V. Collector dissipation Pc(max) = 400mW. Collector current Ic
|
USHA India LTD
|
| CM150DUS-12F |
IGBT Module; Continuous Collector Current, Ic:150A; Collector Emitter Saturation Voltage, Vce(sat):2V; Power Dissipation, Pd:520W; Collector Emitter Voltage, Vceo:600V 150 A, 600 V, N-CHANNEL IGBT
|
Powerex, Inc.
|
| 2SA1625 |
High voltage switch. Collector-base voltage: Vcbo = -400V. Collector-emitter voltage: Vceo = -400V. Emitter-base voltage Vebo = -7V. Collector dissipation: Pc(max) = o.75W.
|
USHA India LTD
|
| SMBT2907A07 |
PNP Silicon Switching Transistor Low collector-emitter saturation voltage
|
Infineon Technologies AG
|
| DP030 |
-300 mA, PNP silicon transistor
Extremely low collector-to-emitter saturation voltage
|
AUK[AUK corp]
KODENSHI KOREA CORP.
|
| SMBT3904PN SMBT3904UPN SMBT3904PN07 |
NPN / PNP Silicon Switching Transistor Array Low collector-emitter saturation voltage
|
Infineon Technologies AG
|
| BC847PN Q62702-C2374 BC847PNQ62702C2374 Q62702-C15 |
PNP Silicon AF Transistors (For general AF applications High collector current High current gain)
TRANSISTOR SOT363
NPN/PNP Silicon AF Transistor Array (For AF input stages and driver applications High current gain Low collector-emitter saturation voltage)
From old datasheet system
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| 2N6515 |
High voltage transistor. Collector-emitter voltage: Vceo = 250V. Collector-base voltage: Vcbo = 250V. Collector dissipation: Pc(max) = 625mW.
|
USHA India LTD
|
| DP500F |
PNP Silicon Transistor (Extremely low collector-to-emitter saturation voltage)
|
AUK[AUK corp]
|
| 2SB1643 |
High collector to emitter VCEO. High collector power dissipation PC.
|
TY Semiconductor Co., Ltd
|
